? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 10 a v ge = 0v t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 120a, v ge = 15v, note 1 1.42 1.70 v t j = 125 c 1.47 v ds99797a(07/08) IXGH120N30B3 v ces = 300v i c110 = 120a v ce(sat) 1.7v genx3 tm 300v igbt medium speed low vsat pt igbts for 10-50 khz switching symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c 120 a i cm t c = 25 c, 1ms 480 a ssoa v ge = 15v, t j = 125 c, r g = 1 i cm = 240 a (rbsoa) clamped inductive load @v ce 300v p c t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13 / 10 nm/lb.in. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 6 g g = gate c = collector e = emitter tab = collector to-247 (ixgh) g c e tab features z optimized for low switching losses z square rbsoa z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGH120N30B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 55 90 s c ies 6700 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 650 pf c res 160 pf q g 225 nc q ge i c = 120a, v ge = 15v, v ce = 0.5 ? v ces 38 nc q gc 85 nc t d(on) 22 ns t r 27 ns t d(off) 100 ns t f 64 ns t d(on) 21 ns t r 30 ns t d(off) 106 ns t f 250 ns r thjc 0.23 c/w r thck 0.21 c/w resistive load, t j = 125 c i c = 60a, v ge = 15v v ce = 240v, r g = 1 resistive load, t j = 25 c i c = 60a, v ge = 15v v ce = 240v, r g = 1 notes: 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2008 ixys corporation, all rights reserved IXGH120N30B3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 240a i c = 60a i c = 120a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 240a 120a 60a t j = 25oc fig. 6. input admittance 0 25 50 75 100 125 150 175 200 225 250 275 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH120N30B3 ixys ref: g_120n30b3(76)08-07-08-b fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 20 40 60 80 100 120 140 0 40 80 120 160 200 240 280 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v ge - volts v ce = 150v i c = 120a i g = 10ma fig. 9. reverse-bias safe operating area 0 30 60 90 120 150 180 210 240 270 50 75 100 125 150 175 200 225 250 275 300 325 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved IXGH120N30B3 ixys ref: g_120n30b3(76)08-07-08-b fig. 15. resistive turn-off switching times vs. gate resistance 100 125 150 175 200 225 250 275 300 325 350 375 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r g - ohms t f - nanoseconds 80 90 100 110 120 130 140 150 160 170 180 190 t d ( o f f ) - nanoseconds i c = 60a i c = 120a t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v fig. 13. resistive turn-on rise time vs. collector current 25 27 29 31 33 35 37 39 60 65 70 75 80 85 90 95 100 105 110 115 120 i c - amperes t r - nanoseconds r g = 1 ? v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 14. resistive turn-on switching times vs. gate resistance 28 29 30 31 32 33 34 35 36 37 38 39 40 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r g - ohms t r - nanoseconds 17 18 19 20 21 22 23 24 25 26 27 28 29 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 60a i c = 120a fig. 16. resistive turn-off switching times vs. junction temperature 25 50 75 100 125 150 175 200 225 250 275 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 85 90 95 100 105 110 t d(off) - nanoseconds i c = 60a i c = 120a t f t d(off) - - - - r g = 1 , v ge = 15v v ce = 240v fig. 17. resistive turn-off switching times vs. collector current 0 25 50 75 100 125 150 175 200 225 250 275 60 65 70 75 80 85 90 95 100 105 110 115 120 i c - amperes t f - nanoseconds 86 88 90 92 94 96 98 100 102 104 106 108 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 12. resistive turn-on rise time vs. junction temperature 25 27 29 31 33 35 37 39 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? v ge = 15v v ce = 240v i c = 120a i c = 60a
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